High-voltage silicon-carbide (SiC) MOSFETs and diodes combine the advantages of fast switching speeds and very low switching losses. This allows power converters designed with them to operate at ...

Transport phenomena in semiconductors, theory of the p-n junction, bipolar and unipolar devices, general analysis of the metal-semiconductor and MIS structures, CCD, MOSFET and bipolar transistors.

Measuring the actual collector-emitter breakdown voltage is practically impossible without destroying the device. Therefore, BVCES is the collector-emitter voltage at which no more than the specified ...

This application note discusses about power diode and its reverse recovery characteristics. The document focuses on the three parameters of diode reverse recovery characteristics, such as the reverse ...