Intel is in production with several 65-nm processors now, creating an inventory of commercial microprocessor products that will begin shipping early next year. At the IEDM conference, Intel showed die ...
Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...
—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...
PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate noise ...
Analog circuit design using MOS transistors represents a dynamic and rapidly evolving field that is integral to modern electronics. Exploiting the inherent advantages of MOS technology—such as ...
Washington, D.C. — Intel Corp. faced off against the alliance of Advanced Micro Devices and IBM on the stage of the International Electron Devices Meeting here Tuesday (Dec. 6th), presenting 65-nm ...
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