Wireless communications products that depend on RF principles are everywhere these days, and the growth rate is astonishing. From cell phones and wireless PDAs to Wi-Fi-enabled laptops, Bluetooth ...
In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
In reality, RF signals are “rectified” at the input of the amplifier by electrostatic discharge (ESD) diodes, input structures, and other non-linear elements contained within the amplifier. In a ...
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