The startup company mqSemi has introduced a Singular Point Source MOS (S-MOS) cell design that is suitable for power MOS based devices. Using Silvaco Victory Process and Device Software, the S-MOS ...
Flat-band voltage drift as a function of stress time during stress-test measurement on SiC MOS capacitors. In the figure, conventional interface nitridation using NO (gray) and the 2-step diluted ...
This new module is the first to incorporate a power semiconductor comprised of just an SiC MOSFET, increasing the rated current to 180A for broader applicability while contributing to lower power ...
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