Cree, Inc. introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree® MOSFET and Schottky diode performance in a configurable half bridge circuit. The design ...
High-voltage silicon-carbide (SiC) MOSFETs and diodes combine the advantages of fast switching speeds and very low switching losses. This allows power converters designed with them to operate at ...
“Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a ...
DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...
Electric vehicle, commercial transportation, renewable energy and storage system designers can benefit from silicon carbide stack solution that drives performance and cost efficiencies and accelerates ...
Infineon Technologies AG has extended its CoolSiC portfolio with the introduction of M1H technology 1,200-V SiC MOSFETs with enhanced features. These devices will be available in Easy modules and ...
As silicon (Si), gallium-nitride (GaN), and silicon-carbide (SiC) processes are maturing, so, too, are their suppliers’ expertise and creativity. It is worthwhile to examine the pros and cons of each ...
We’ve seen how silicon carbide semiconductors offer a path of less resistance that enables higher-voltage power electronics for next-generation electric vehicles with big batteries and fast charging ...
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