This collection supports and amplifies research related to SDG 9 - Industry, innovation and infrastructure. Recent advances in understanding and manipulating spin, orbital, and charge currents via ...

Japanese scientists have developed a spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) device with the world’s lowest write power in a significant step toward energy-efficient, ...

Researchers at Kyushu University have shown that careful engineering of materials interfaces can unlock new applications for ...

A new technical paper titled “Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy” was published by researchers at UC Berkeley and Lawrence ...

Researchers discovered a new mechanism for faster, more efficient magnetic domain wall motion using dual spin torques in cobalt-iridium-platinum multilayers. In spintronic memory, information is ...

(Nanowerk News) Our data-driven world demands more—more capacity, more efficiency, more computing power. To meet society’s insatiable need for electronic speed, physicists have been pushing the ...

A new technical paper titled “Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM” was published by researchers at Georgia Institute of Technology, MIT, and Cornell University. “This ...

As AI and IoT drive explosive global data growth, energy-efficient information devices have become critical for sustainability. Kyushu University researchers demonstrate that inserting an atomic-scale ...

Our data-driven world demands more—more capacity, more efficiency, more computing power. To meet society’s insatiable need for electronic speed, physicists have been pushing the burgeoning field of ...